The effects of using ALD-grown ZnO buffer layers on the properties of indium tin oxide grown by chemical solution deposition.
Identifieur interne : 001087 ( Main/Exploration ); précédent : 001086; suivant : 001088The effects of using ALD-grown ZnO buffer layers on the properties of indium tin oxide grown by chemical solution deposition.
Auteurs : RBID : pubmed:22097583Abstract
In comparison to ITO films prepared by chemical solution deposition on bare substrates, the use of a ZnO buffer layer and Al2O3 barrier layer has been shown to have a significant effect on morphology, measured sheet resistance and therefore resistivity. In the case of quartz substrates, ITO resistivity decreased from 9.6 x 10(-3) ohms cm to 4.3 x 10(-3) ohms cm on incorporation of a ZnO buffer layer and Al2O3 barrier layer, both grown by ALD. A change in surface morphology was observed, due to the presence of the buffer layer, however, the ZnO buffer layer was not found to influence the XRD pattern of the ITO films.
PubMed: 22097583
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In the case of quartz substrates, ITO resistivity decreased from 9.6 x 10(-3) ohms cm to 4.3 x 10(-3) ohms cm on incorporation of a ZnO buffer layer and Al2O3 barrier layer, both grown by ALD. A change in surface morphology was observed, due to the presence of the buffer layer, however, the ZnO buffer layer was not found to influence the XRD pattern of the ITO films.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">22097583</PMID><DateCreated><Year>2011</Year><Month>11</Month><Day>21</Day></DateCreated><DateCompleted><Year>2011</Year><Month>12</Month><Day>06</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Print">1533-4880</ISSN><JournalIssue CitedMedium="Print"><Volume>11</Volume><Issue>9</Issue><PubDate><Year>2011</Year><Month>Sep</Month></PubDate></JournalIssue><Title>Journal of nanoscience and nanotechnology</Title><ISOAbbreviation>J Nanosci Nanotechnol</ISOAbbreviation></Journal><ArticleTitle>The effects of using ALD-grown ZnO buffer layers on the properties of indium tin oxide grown by chemical solution deposition.</ArticleTitle><Pagination><MedlinePgn>8354-7</MedlinePgn></Pagination><Abstract><AbstractText>In comparison to ITO films prepared by chemical solution deposition on bare substrates, the use of a ZnO buffer layer and Al2O3 barrier layer has been shown to have a significant effect on morphology, measured sheet resistance and therefore resistivity. In the case of quartz substrates, ITO resistivity decreased from 9.6 x 10(-3) ohms cm to 4.3 x 10(-3) ohms cm on incorporation of a ZnO buffer layer and Al2O3 barrier layer, both grown by ALD. A change in surface morphology was observed, due to the presence of the buffer layer, however, the ZnO buffer layer was not found to influence the XRD pattern of the ITO films.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>O'Brien</LastName><ForeName>Shane</ForeName><Initials>S</Initials><Affiliation>Advanced Materials and Surfaces Group, Tyndall National Institute-University, College Cork, Lee Maltings, Cork, Ireland.</Affiliation></Author><Author ValidYN="Y"><LastName>Povey</LastName><ForeName>Ian M</ForeName><Initials>IM</Initials></Author><Author ValidYN="Y"><LastName>Hamilton</LastName><ForeName>Jeff A</ForeName><Initials>JA</Initials></Author><Author ValidYN="Y"><LastName>Kingsley</LastName><ForeName>Andrew</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Thony</LastName><ForeName>Philippe</ForeName><Initials>P</Initials></Author><Author ValidYN="Y"><LastName>Perraud</LastName><ForeName>Simon</ForeName><Initials>S</Initials></Author><Author ValidYN="Y"><LastName>Pemble</LastName><ForeName>Martyn E</ForeName><Initials>ME</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>J Nanosci Nanotechnol</MedlineTA><NlmUniqueID>101088195</NlmUniqueID><ISSNLinking>1533-4880</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>11</Month><Day>22</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>11</Month><Day>22</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2011</Year><Month>11</Month><Day>22</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">22097583</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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